to-126 plastic-encapsulate transistors 3DD13003 transistor (npn) features power switching applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current -continuous 1.5 a p c collector power dissipation 1.5 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =5ma, i e =0 700 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =2ma, i c =0 9 v collector cut-off current i cbo v cb =700v,i e =0 1 ma collector cut-off current i ceo v ce =400v,i b =0 0.5 ma emitter cut-off current i ebo v eb =9v, i c =0 1 ma h fe1 v ce =5v, i c = 0.5 a 8 40 dc current gain h fe2 v ce =5v, i c = 1.5a 5 collector-emitter saturation voltage v ce(sat) i c =1a,i b =0.25a 0.6 v base-emitter saturation voltage v be(sat) i c =1a,i b =0.25a 1.2 v transition frequency f t v ce =10v,ic=100ma, f =1mhz 5 mhz fall time t f i c =1a, i b1 =-i b2 =0.2a, v cc =100v 0.5 s to-126 1.base 2.collector 3.emitter storage time t s i c =250ma (ui9600) 2 4 s classification of h fe(1) range 10-15 15-20 20-25 25-30 30-35 35-40 classification of t s rank a1 a2 b1 b2 range 2-2.5 ( s ) 2.5-3( s ) 3-3.5( s ) 3.5-4 ( s ) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
0.1 1 10 10 100 1000 0.1 1 0.01 0.1 1 0.1 1 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 0.01 0.1 1 1 10 100 024681 0 0 100 200 300 400 500 f=1mhz i e =0/i c =0 t a =25 c ob c ib v cb / v eb c ob / c ib ?? 20 capacitance c (pf) reverse voltage v r (v) 0.3 0.05 0.3 0.03 3DD13003 0.02 3 =4 t a =100 t a =25 v cesat ?? i c collector-emitter saturation voltage v cesat (v) collector current i c (a) 0.3 0.05 0.3 0.03 0.02 3 =4 t a =25 t a =100 i c v besat ?? base-emitter saturation voltage v besat (v) collector current i c (a) 300 30 3 0.3 p c ?? t a collector power dissipation p c (w) ambient temperature t a ( ) 30 3 h fe ?? 2 v ce =5v t a =100 t a =25 i c dc current gain h fe collector current i c (a) common emitter t a =25 static characteristic i b =20ma i b =18ma i b =16ma i b =14ma i b =12ma i b =10ma i b =8ma i b =6ma i b =4ma i b =2ma collector current i c (ma) collector-emitter voltage v ce (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
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